IW4011B Description
TECHNICAL DATA IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4011B NAND gates provide the system designer with direct emplementation of the NAND function. 3.0 to 18 V Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (over full package temperature range):.