IW4012B Description
TECHNICAL DATA IW4012B Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4012B NAND gates provide the system designer with direct emplementation of the NAND function. 3.0 to 18 V Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (over full package temperature range):.