10N50 Datasheet | Inchange Semiconductor

DESCRIPTION - Drain Current - ID=10A@ TC=25℃ - Drain Source Voltage- : VDSS= 500V(Min) - Fast Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for applications such as switching regulators, switching converters,motor drivers,relay drivers and drivers for power bipolar switching transistors requiring High speed and low gate drive power ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) Gate-Source Voltage ±20 Drain Current-continuous@ TC=25℃ Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor - ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL...