10N50
10N50 is N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
DESCRIPTION
TO-220
The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode. The UTC 10N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
TO-220F1
- FEATURES
- 10A, 500V, RDS(ON)=0.61Ω @ VGS=10V
- High Switching Speed
- 100% Avalanche Tested
- SYMBOL
2.Drain
1.Gate
3.Source
- ORDERING INFORMATION
Package TO-220 TO-220F1 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube
Ordering Number Lead Free Halogen Free 10N50L-TA3-T 10N50G-TA3-T 10N50L-TF1-T 10N50G-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-531.a
- PARAMETER Drain-Source Voltage Gate-Source Voltage
Preliminary
SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt
Power MOSFET
RATINGS 500 ±30 10 (Note2) 40 (Note 2) UNIT V V A A A m J m J V/ns
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Continuous (TC=25°C) Pulsed (Note 3) Avalanche Current (Note 3) Single Pulsed (Note 4) Avalanche Energy Repetitive (Note 5) Peak Diode Recovery dv/dt (Note 5) Drain Current
10 388 14.3 4.5 TO-220 143 TC=25°C W TO-220F1 48 PD Power Dissipation TO-220 1.14 Derate above 25°C W/°C TO-220F1 0.38 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 7m H, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5....