Inchange Semiconductor 11N90
N-Channel Mosfet Transistor
| Part No. | 11N90 |
|---|---|
| Datasheet | 11N90 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel Mosfet Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 11A@ TC=25℃●Drain Source Voltage- : VDSS= 900V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max)
●Fast Switching
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APPLICATIONS
●Switch mode power supply.●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 900 ±30 V V ID Drain Current-Continuous 11 A IDM Drain Current-Single Plused 44 A PD Total Dissipation @TC=25℃ 160 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.78 ℃/W 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forw...