Unisonic Technologies 11N90
11N90 is a N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.| Part No. | 11N90 |
|---|---|
| Datasheet | 11N90 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC The UTC 11N90 is universally applied in high efficiency switch mode power supply,●
FEATURES
* RDS(on) < 1.1Ω @ VGS = 10V, ID = 5.5A * High switching speed * Improved dv/dt capability * 100% avalanche tested● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 11N90L-TA3-T 11N90G-TA3-T TO-220 11N90L-TF1-T 11N90G-TF1-T TO-220F1 11N90L-TF2-T 11N90G-TF2-T TO-220F2 11N90L-T3P-T 11N90G-T3P-T TO-3P 11N90L-T3N-T 11N90G-T3N-T TO-3PN 11N90L-T47-T 11N90G-T47-T TO-247 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tube Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-497.F 11N90
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R502-497.F 11N90 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage Drain Current Avalanche Energy Con...
