Inchange Semiconductor 18N20
N-Channel Mosfet Transistor
| Part No. | 18N20 |
|---|---|
| Datasheet | 18N20 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel Mosfet Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 18A@ TC=25℃●Static drain-source on-resistance: RDS(on) ≤0.092Ω
●Fast Switching Speed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Switch regulators
●Switching converters, motor drivers, relay drivers
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 57 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.19 UNIT ℃/W 18N20 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA...