Datasheet4U Logo Datasheet4U.com

18N20 - N-CHANNEL POWER MOSFET

General Description

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.

The 18N20 suitable for resonant and PWM converter topologies.

Key Features

  • RDS(ON) < 0.20Ω @ VGS=10V, ID=9.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
18N20 N-Channel Mosfet Transistor Inchange Semiconductor
18N20GH AP18N20GH Advanced Power Electronics
18N20GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
18N25 18A 250V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES
18N10 N-Channel Mosfet Transistor Inchange Semiconductor

Other Datasheets by Unisonic Technologies

Part Number Description
18N25-HC N-CHANNEL POWER MOSFET
18N50-C N-CHANNEL MOSFET
18N50-MH N-CHANNEL POWER MOSFET
18N60-ML N-CHANNEL POWER MOSFET
18N70-HC N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 18N20 Preliminary 18A, 200V, 0.20Ω, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The 18N20 suitable for resonant and PWM converter topologies.  FEATURES * RDS(ON) < 0.20Ω @ VGS=10V, ID=9.