18N20 Description
These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The 18N20 suitable for resonant and PWM converter topologies.
18N20 Key Features
- RDS(ON) < 0.20Ω @ VGS=10V, ID=9.0A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
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