18N20 - N-Channel Mosfet Transistor

Features

Drain Current ID= 18A@ TC=25℃.
Static drain-source on-resistance: RDS(on) ≤0.092Ω.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

Datasheet Details

Part number	18N20
Manufacturer	Inchange Semiconductor
File Size	282.23 KB
Description	N-Channel Mosfet Transistor
Datasheet	18N20 Datasheet
Additional preview pages of the 18N20 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance: RDS(on) ≤0.092Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switch regulators ·Switching converters, motor drivers, relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 57 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.

Published: Jul 14, 2016 |