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2N3772J - NPN Transistor

General Description

J:High DC Current Gain-hFE:100-150@IC = 10A Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 10A

and reliable operation.

Designed for linear amplifiers, series pass regulators, and inductive switching ap

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isc Silicon NPN Power Transistor 2N3772J DESCRIPTION ·J:High DC Current Gain-hFE:100-150@IC = 10A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.