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2N3771 - NPN Transistor

General Description

Excellent Safe Operating Area High DC Current Gain-hFE=15(Min)@IC = 15A Low Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 15A 100% avalanche tested

and reliable operation.

Designed for linear am

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3771 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 15A ·Low Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 15A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage 50 V 50 V 40 V VEBO IC ICM Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak 5 V 30 A 30 A IB Base Current-Continuous 7.