Datasheet Details
| Part number | 2N3771 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.27 KB |
| Description | NPN Transistor |
| Datasheet | 2N3771-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3771.
| Part number | 2N3771 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.27 KB |
| Description | NPN Transistor |
| Datasheet | 2N3771-INCHANGE.pdf |
|
|
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·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 15A ·Low Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 15A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage 50 V 50 V 40 V VEBO IC ICM Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak 5 V 30 A 30 A IB Base Current-Continuous 7.5 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER 200 ℃ -65~200 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N3771 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
Compare 2N3771 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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2N3771 | High Power NPN Silicon Power Transistors | ON Semiconductor |
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2N3771 | NPN High Power Silicon Transistor | VPT |
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2N3771 | NPN HIGH POWER SILICON TRANSISTOR | Microsemi Corporation |
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