2N3771 - High Power NPN Silicon Power Transistors

onsemi

Key Features

Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc.
2N3771 = 2.5 Adc @ VCE = 60 Vdc.
2N3772.
These Devices are Pb.
Free and are RoHS Compliant.

2N3771 high power npn silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	2N3771
Manufacturer	onsemi
File Size	239.73 KB
Description	High Power NPN Silicon Power Transistors
Datasheet	2N3771 Datasheet

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Part Number	Description
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Full PDF Text Transcription (Reference)

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2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak Symbol 2N3771 VCEO 40 VCEX 50 VCB 50 VEB 5.0 IC 30 30 2N3772 60 80 100 7.0 20 30 Unit Vdc Vdc Vdc Vdc Adc Base Current − Continuous Peak IB 7.5 5.0 Adc 15 15 Total Device Dissipation @ TC = 25°C PD Derate above 25°C 150 0.