2N3771 Description
2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.
2N3771 Key Features
- Forward Biased Second Breakdown Current Capability
- 2N3771 = 2.5 Adc @ VCE = 60 Vdc
- 2N3772
- These Devices are Pb-Free and are RoHS pliant
- Continuous
- Continuous Peak
- 65 to + 200
- Rev. 12