2N3772
2N3772 is High Power NPN Silicon Power Transistors manufactured by onsemi.
Features
- Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc
- 2N3771 = 2.5 Adc @ VCE = 60 Vdc
- 2N3772
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (Note 1)
Rating Collector- Emitter Voltage Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous
Peak
Symbol 2N3771
VCEO
VCEX
2N3772 60 80 100 7.0 20 30
Unit Vdc Vdc Vdc Vdc Adc
Base Current
- Continuous Peak
5.0 Adc
Total Device Dissipation @ TC = 25°C PD Derate above 25°C
150 0.855
W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
- 65 to + 200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction- to- Case q JC
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC registered...
