Datasheet Details
| Part number | 2N3772 |
|---|---|
| Manufacturer | TRANSYS Electronics Limited |
| File Size | 98.94 KB |
| Description | NPN SILICON PLANAR POWER TRANSISTOR |
| Datasheet | 2N3772_TRANSYSElectronicsLimited.pdf |
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Overview: Transys Electronics L I M I T E D NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ww.. Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.
| Part number | 2N3772 |
|---|---|
| Manufacturer | TRANSYS Electronics Limited |
| File Size | 98.94 KB |
| Description | NPN SILICON PLANAR POWER TRANSISTOR |
| Datasheet | 2N3772_TRANSYSElectronicsLimited.pdf |
|
|
|
Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 0.170 ºC/W SYMBOL VCBO VCEO VCEX VEBO IC IB PD Tj, Tstg VALUE 100 60 80 7 20 30 5 15 150 0.855 - 65 to +200 UNITS V V V V A A W W/ºC ºC ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Sustaing Voltage Collector Emitter Sustaing Voltage Collector Emitter Sustaing Voltage Collector Cut Off Current Collector Cut Off Current SYMBOL VCEO (sus)* VCEX (sus) VCER (sus) ICEO ICEV TEST CONDITION IC=0.2A, IB=0 IC=0.2A, RBE=100Ω,VEB=(off)=1.5V IC=0.2A, RBE=100Ω, VCE=50V, IB=0 VCE=100V, VEB(off)=1.5V Tc=150ºC VCE=45V, VEB(off)=1.5V VCB=100V, IE=0 VBE=7V, IC=0 IC=10A, VCE=4V IC=20A, VCE=4V IC=10A, IB=1A IC=20A, IB=4A IC=10A, VCE=4V MIN 60 80 70 MAX UNITS V V V mA mA 10 5.0 Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage ICBO IEBO hFE* VCE(sat) VBE(on) 15 5 10 5.0 5.0 60 1.4 4.0 2.2 mA mA V V NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) Second Breakdown DESCRIPTION Second Breakdown Energy with ..
Base Forward Biased Dynamic Characteristics Current Gain - Bandwidth Product Small Signal Current Gain SYMBOL IS/b TEST CONDITION VCE=60V,t=1.0 s,Nonrepetitive MIN 2.5 MAX UNITS A fT hfe IC=1.0A, VCE=4V, f=50KHz IC=1A, VCE=4V, f=1KHz 0.2 40 MHz *Pulse Test: Pulse Width <300µ s, Repetitive Rate 60 cps.
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