2N3772 - NPN High Power Silicon Transistor

VPT

Download the 2N3772 datasheet PDF. This datasheet also covers the 2N3771 variant, as both devices belong to the same npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/413.
TO-3 (TO-204AA) Package.
Designed for High Speed Switching and Amplifier.

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2N3772 npn high power silicon transistor by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N3771-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N3772
Manufacturer	VPT
File Size	437.45 KB
Description	NPN High Power Silicon Transistor
Datasheet	2N3772 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N3771	NPN High Power Silicon Transistor
2N3700	NPN Low Power Silicon Transistor
2N3700UB	NPN Low Power Silicon Transistor
2N3715	NPN High Power Silicon Transistor
2N3716	NPN High Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N3771 & 2N3772 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/413 • TO-3 (TO-204AA) Package • Designed for High Speed Switching and Amplifier Applications Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Base Breakdown Voltage IC = 200 mA dc, 2N3771 IC = 200 mA dc, 2N3772 V(BR)CEO V dc 40 60 — Collector - Emitter Breakdown Voltage IC = 200 mA dc; RBE = 100Ω, 2N3771 IC = 200 mA dc; RBE = 100Ω, 2N3772 V(BR)CER V dc 45 70 — Collector - Emitter Breakdown Voltage IC = 200 mA dc; VBE = -1.5 V dc, 2N3771 IC = 200 mA dc; VBE = -1.