2N3772 - HIGH-POWER NPN SILICON TRANSISTORS

Motorola Semiconductor (now NXP Semiconductors)

Download the 2N3772 datasheet PDF. This datasheet also covers the 2N3771 variant, as both devices belong to the same high-power npn silicon transistors family and are provided as variant models within a single manufacturer datasheet.

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2N3772 high-power npn silicon transistors by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N3771-Motorola.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N3772
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	168.97 KB
Description	HIGH-POWER NPN SILICON TRANSISTORS
Datasheet	2N3772 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N3771	HIGH-POWER NPN SILICON TRANSISTORS
2N3712	NPN Transistor
2N3713	NPN silicon power transistors
2N3714	NPN silicon power transistors
2N3719	PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3771 (SILICON) 2N3772 MJ3771 M.J3772 HIGH-POWER NPN SILICON TRANSISTORS · . . designed for use in power amplifier and switching circuits applications. • High DC Current Gain - hFE = 15 (Min) @ IC = 15 Adc - 2N3771, MJ3771 15 (Min) @ IC = 10 Adc - 2N3772. MJ3772 • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 15 Adc - MJ3771 1.0 Vdc (Max) @ IC = 10 Adc - MJ3772 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60 VOLTS 150 WATTS *MAXIMUM RATINGS Rating Coliector~Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current ~ Continuous Peak Base Current - Continuous Total Device Dissipation@TC=250C Derate above 2SoC Operating and Storage Junction Temperature Range Symbol VeEO VeEX Ves VES Ie IS PD TJ.