2N3772 Datasheet | Motorola Semiconductor

2N3771 (SILICON) 2N3772 MJ3771 M.J3772 HIGH-POWER NPN SILICON TRANSISTORS - . . designed for use in power amplifier and switching circuits applications. - High DC Current Gain - h FE = 15 (Min) @ IC = 15 Adc - 2N3771, MJ3771 15 (Min) @ IC = 10 Adc - 2N3772. MJ3772 - Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 15 Adc - MJ3771 1.0 Vdc (Max) @ IC = 10 Adc - MJ3772 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60 VOLTS 150 WATTS - MAXIMUM RATINGS Rating Coliector~Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current ~ Continuous Peak Base Current - Continuous Total Device Dissipation@TC=250C Derate above 2So C Operating and Storage Junction Temperature Range Symbol Ve EO Ve EX Ves VES Ie IS PD TJ.Tstg - THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case 2N3771 MJ3771 2N3772...