2N3773 - NPN Power Transistors

onsemi

Key Features

High Safe Operating Area (100% Tested) 150 W @ 100 V.
Completely Characterized for Linear Operation.
High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A.
For Low Distortion Complementary Designs.
This is a Pb.
Free Device.

2N3773 npn power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	2N3773
Manufacturer	onsemi
File Size	195.43 KB
Description	NPN Power Transistors
Datasheet	2N3773 Datasheet

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Other Datasheets by onsemi

Part Number	Description
2N3771	High Power NPN Silicon Power Transistors
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2N3700	Low Power Transistor
2N3019	Low Power Transistor
2N3019S	Low Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Power Transistors 2N3773 The 2N3773 is a PowerBase power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. Features  High Safe Operating Area (100% Tested) 150 W @ 100 V  Completely Characterized for Linear Operation  High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.