2N3772 Datasheet | Microsemi

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices .. Qualified Level 2N3772 JANTX JANTXV 2N3771 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N3771 40 50 7.0 7.5 30 60 100 7.0 5.0 20 Unit Vdc Vdc Vdc Adc Adc W W 0 C @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 34.2 m W/0C for TA > +250C 2) Derate linearly 857 m W/0C for TC > +250C 6.0 150 -65 to +200 TO-3- (TO-204AA) - See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 200 m Adc Collector-Emitter Breakdown Voltage IC = 200 m Adc, RBE = 100 Ω Collector-Emitter Breakdown Voltage IC = 200 m Adc, VBE = -1.5 Vdc Collector-Emitter Cutoff Current VCE = 30 Vdc VCE = 50 Vdc Emitter-Base Cutoff Current VBE = 7.0 Vdc Collector-Emitter Cutoff Current VBE = 1.5 Vdc, VCE = 50 Vdc VBE = 1.5 Vdc, VCE = 100 Vdc 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 V(BR)CEO 40 60 45 70 50 90 5.0 5.0 2.0 Vdc V(BR)CER Vdc V(BR)CEX Vdc ICEO m Adc IEBO m Adc ICEX 500 500 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3771, 2N3772 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol h FE 2N3771 2N3772 Both VCE(sat) 2N3771 2N3771 2N3772 2N3772 VBE 2N3771 2N3772 hfe hfe Cobo 40 6.0 30 2.3 2.0 Vdc 1.5 4.0 1.2 4.0 Vdc 15 15 40 60 60 Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 15 Adc, VCE = 4.0 Vdc IC = 10 Adc, VCE = 4.0 Vdc IC = 1.0 Adc, VCE = 4.0 Vdc Collector-Emitter Saturation Voltage IC = 15 Adc, IB = 1.5 Adc IC = 30 Adc, IB = 6.0 Adc IC = 10 Adc, IB = 1.0 Adc .. IC = 20 Adc, IB = 4.0 Adc...