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2N3773 - Complementary Power Transistor

Key Features

  • High Power Dissipation PD = 150W (TC = 25°C).
  • High DC Current Gain and Low Saturation Voltage hFE = 15 - 60 at IC = 8A, VCE = 4V VCE(SAT) = 1.4V (Maximum) at IC = 8A, IB = 0.8A. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres Maximum Ratings Characteris.

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Datasheet Details

Part number 2N3773
Manufacturer Multicomp
File Size 348.81 KB
Description Complementary Power Transistor
Datasheet download datasheet 2N3773 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3773, 6609 Complementary Power Transistors The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators, solenoid drivers and dc to dc converters or inverters. Features: • High Power Dissipation PD = 150W (TC = 25°C). • High DC Current Gain and Low Saturation Voltage hFE = 15 - 60 at IC = 8A, VCE = 4V VCE(SAT) = 1.4V (Maximum) at IC = 8A, IB = 0.8A. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.