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2N3773 - High power NPN silicon transistor

General Description

cThe device is a planar NPN transistor mounted in uTO-3 metal case.

It is intended for linear rodamplifiers and inductive switching applications.

Obsolete Product(s) - Obsolete PFigure 1.

Key Features

  • High power dissipation.
  • Low collector-emitter saturation voltage t(s).

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2N3773 High power NPN transistor Features ■ High power dissipation ■ Low collector-emitter saturation voltage t(s)Description cThe device is a planar NPN transistor mounted in uTO-3 metal case. It is intended for linear rodamplifiers and inductive switching applications. 1 2 TO-3 Obsolete Product(s) - Obsolete PFigure 1. Internal schematic diagram Table 1. Device summary Order code Marking 2N3773 2N3773 Package TO-3 Packaging Tray October 2008 Rev 2 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings 2N3773 Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEO Collector-emitter voltage (IB = 0) 140 V VCEV Collector-emitter voltage (VBE = -1.