Datasheet Details
| Part number | 2N3773 |
|---|---|
| Manufacturer | TRANSYS |
| File Size | 122.63 KB |
| Description | NPN SILICON PLANAR POWER TRANSISTOR |
| Datasheet | 2N3773_TRANSYS.pdf |
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Overview: Transys Electronics L I M I T E D NPN SILICON PLANAR POWER TRANSISTOR 2N3773 TO-3 Metal Can Package plementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications ABSOLUTE MAXIMUM.
| Part number | 2N3773 |
|---|---|
| Manufacturer | TRANSYS |
| File Size | 122.63 KB |
| Description | NPN SILICON PLANAR POWER TRANSISTOR |
| Datasheet | 2N3773_TRANSYS.pdf |
|
|
|
Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak (1) Base Current Continuous Peak (1) Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 1.17 ºC/W (1) Pulse Test: Pulse Width =5ms, Duty Cycle<10% ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Sustaing Voltage Collector Emitter Sustaing Voltage Collector Emitter Sustaing Voltage Collector Cut Off Current Collector Cut Off Current SYMBOL VCEO (sus)* VCEX (sus) * VCER (sus) * ICEO ICEX TEST CONDITION IC=0.2A, IB=0 IC=0.1A, RBE=100Ω,VBE(off)=1.5V IC=0.2A, RBE=100Ω VCE=120V, IB=0 VCE=140V, VBE(off)=1.5V Tc=150ºC VCE=140V, VBE(off)=1.5V VCB=140V, IE=0 VBE=7V, IC=0 IC=8A, VCE=4V IC=16A, VCE=4V IC=8A, IB=800mA IC=16A, IB=3.2A IC=8A, VCE=4V MIN 140 160 150 MAX UNITS V V V mA mA mA mA mA SYMBOL VCBO VCEO VCEX VEBO IC IB PD Tj, Tstg .DataSheet.net/ VALUE 160 140 160 7 16 30 4 15 150 0.855 - 65 to +200 UNITS V V V V A A A A W W/ºC ºC 10 2.0 10 2.0 5.0 60 1.4 4.0 2.2 Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter on Voltage ICBO IEBO hFE* VCE(sat) * VBE(on)* 15 5 V V V Datasheet pdf - http://..co.kr/ NPN SILICON PLANAR POWER TRANSISTOR 2N3773 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) Dynamic Characteristics DESCRIPTION Magnitude of mon Emitter Small Signal,Short Circuit, Forward Current Transfer Ratio Small Signal Current Gain Second Breakdown Characteristics DESCRIPTION Second Breakdown Collector Current With Base Forward Biased SYMBOL
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3773 | NPN SILICON PLANAR POWER TRANSISTOR | CDIL |
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2N3773 | Silicon power Transistor | Central Semiconductor |
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2N3773 | NPN Power Transistors | ON Semiconductor |
 |
2N3773 | High power NPN silicon transistor | ST Microelectronics |
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2N3773 | COMPLEMENTARY SILICON TRANSISTORS | UTC |
| Part Number | Description |
|---|---|
| 2N3439 | NPN HIGH VOLTAGE SILICON TRANSISTORS |
| 2N3440 | NPN HIGH VOLTAGE SILICON TRANSISTORS |