Datasheet4U Logo Datasheet4U.com

2N3771 - HIGH-POWER NPN SILICON TRANSISTORS

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3771 (SILICON) 2N3772 MJ3771 M.J3772 HIGH-POWER NPN SILICON TRANSISTORS · . . designed for use in power amplifier and switching circuits applications. • High DC Current Gain - hFE = 15 (Min) @ IC = 15 Adc - 2N3771, MJ3771 15 (Min) @ IC = 10 Adc - 2N3772. MJ3772 • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 15 Adc - MJ3771 1.0 Vdc (Max) @ IC = 10 Adc - MJ3772 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60 VOLTS 150 WATTS *MAXIMUM RATINGS Rating Coliector~Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current ~ Continuous Peak Base Current - Continuous Total Device Dissipation@TC=250C Derate above 2SoC Operating and Storage Junction Temperature Range Symbol VeEO VeEX Ves VES Ie IS PD TJ.