Datasheet Details
| Part number | 2N3771 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 41.39 KB |
| Description | HIGH POWER NPN SILICON TRANSISTOR |
| Datasheet | 2N3771_STMicroelectronics.pdf |
|
|
Overview: 2N3771 ® 2N3772 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED.
| Part number | 2N3771 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 41.39 KB |
| Description | HIGH POWER NPN SILICON TRANSISTOR |
| Datasheet | 2N3771_STMicroelectronics.pdf |
|
|
|
The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case.
They are intended for linear amplifiers and inductive switching applications.
1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCEO VCEV VCBO VEBO IC ICM IB IBM Ptot Tstg Collector-Emitter Voltage (IE = 0) Collector-Emitter Voltage (VBE = -1.5V) Collector-Base Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature December 2000 Value 2N3771 2N3772 40 60 50 80 50 100 57 30 20 30 30 7.5 5 15 15 150 -65 to 200 Unit V V V V A A A A W oC 1/4 2N3771/2N3772 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.17 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEV Collector Cut-off for 2N3771 VCB = 50 V Current (VBE = -1.5V) for 2N3772 VCB = 100 V for all VCB = 30 V Tj = 150 oC ICEO Collector Cut-off Current (IB = 0) for 2N3771 VCB = 30 V for 2N3772 VCB = 50 V ICBO Collector Cut-off Current (IE = 0) for 2N3771 VCB = 50 V for 2N3772 VCB = 100 V IEBO Emitter Cut-off Current for 2N3771 VCB = 5 V (IC = 0) for 2N3772 VCB = 7 V VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 0.2 A for 2N3771 for 2N3772 VCEV(sus)∗ Collector-Emitter Sustaining Voltage (VEB = -1.5V) IC = 0.2 A RBE = 100 Ω for 2N3771 for 2N3772 VCER(sus)∗ Collector-Emitter Sustaining Voltage (RBE = 100 Ω) VCE(sat)∗ Collector-Emitter Saturation Voltage IC = 0.2 A for 2N3771 for 2N3772 for 2N3771 IC = 15 A IC = 30 A for 2N3772 IC = 10 A IC = 20 A IB = 1.5 A IB = 6 A IB = 1 A IB = 4 A VBE∗ Base-Emitter Voltage for 2N3771 IC = 15 A for 2N3772 IC = 10 A VCE = 4 V VCE = 4 A hFE∗ DC Current Gain for 2N3771 IC = 15 A IC = 30 A for 2N3772
Compare 2N3771 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N3771 | High Power NPN Silicon Power Transistors | ON Semiconductor |
 |
2N3771 | HIGH-POWER NPN SILICON TRANSISTORS | Motorola |
 |
2N3771 | NPN High Power Silicon Transistor | VPT |
 |
2N3771 | NPN HIGH POWER SILICON TRANSISTOR | Microsemi Corporation |
 |
2N3771 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| 2N3772 | HIGH POWER NPN SILICON TRANSISTOR |
| 2N3700 | Silicon Planar Epitaxial NPN transistor |
| 2N3700HR | NPN transistor |
| 2N3725 | Silicon Planar Epitaxial transistor |
| 2N3019 | SMALL SIGNAL NPN TRANSISTOR |
| 2N3019HR | Hi-Rel NPN bipolar transistor |
| 2N3055 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N3114 | NPN Transistor |
| 2N3209 | Silicon Planar PNP Transistor |
| 2N3250 | Silicon Planar PNP Transistor |