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2N3771 - NPN HIGH POWER SILICON TRANSISTOR

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices www.DataSheet4U.com Qualified Level 2N3772 JANTX JANTXV 2N3771 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N3771 40 50 7.0 7.5 30 2N3772 60 100 7.0 5.0 20 Unit Vdc Vdc Vdc Adc Adc W W 0 C @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 34.2 mW/0C for TA > +250C 2) Derate linearly 857 mW/0C for TC > +250C 6.0 150 -65 to +200 TO-3* (TO-204AA) *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max.