Inchange Semiconductor 2N3773
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2N3773 |
|---|---|
| Datasheet | 2N3773 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●High DC Current Gain-hFE=15(Min)@IC = 8A
●Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 8A
●Complement to Type 2N6609
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation. INCHANGE Semiconductor 2N3773
APPLICATIONS
●Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEX Collector-Emitter Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16 A ICP Collector Current-Peak 30 A IB Base Current-Continuous 4 A IBP Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt...