STMicroelectronics 2N3773
High power NPN silicon transistor
- Max Operating Temp : 200°C
Source:
Octopart
FEATURES
● High power dissipation● Low collector-emitter saturation voltage t(s)
DESCRIPTION
cThe device is a planar NPN transistor mounted in uTO-3 metal case. It is intended for linear rodamplifiers and inductive switching applications. 1 2 TO-3 Obsolete Product(s) - Obsolete PFigure 1. Internal schematic diagram Table 1. Device summary Order code Marking 2N3773 2N3773 Package TO-3 Packaging Tray October 2008 Rev 2 1/7 7 Electrical ratings 1 Electrical ratings 2N3773 Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEO Collector-emitter voltage (IB = 0) 140 V VCEV Collector-emitter voltage (VBE = -1.5 V) 160 V VCBO Collector-base voltage (IE = 0) 160 V VEBO )IC t(sICM ucIB rodIBM PPtot teTstg leTj Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tc ≤ 25 °C Storage temperature Max. operating ju