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2N4273 - NPN Transistor

General Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested

and reliable operation.

Designed for switching regulator applications where high frequency and high voltage

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for switching regulator applications where high frequency and high voltage swings and required ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 175 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 2.5 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 7.