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2N4276 - PNP germanium power transistors

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2N4276 (GERMANIUM) thru 2N4283 PNP germanium power transistors designed for high current applications requiring high-gain and low saturation voltages. CASE 3A (TO-3 modified) CASE 161 (TO-41) For units with lugs attached, specify devices MP4276 etc. (TO-41 package) MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol VCEO 2N4276 2N4278 2N4280 2N4282 2N4277 2N4279 2N4281 2N4283 20 30 45 60 Collector-Emitter Voltage VCES 30 45 60 75 Collector-Base Voltage VeB 30 45 60 75 Emitter-Base Voltage VEB 20 25 30 40 Collector Current - Continuous * Total Device Dissipation @ TC =' 25° C Derate above 25°C Ope rating and Storage Junction Temperature Range I IC• PD • • TJ • Tstg • 60 170 2.