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2N4209 - SWITCHING TRANSISTOR

Download the 2N4209 datasheet PDF. This datasheet also covers the 2N4208 variant, as both devices belong to the same switching transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4208-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (5 TA = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N4208 2N4209 v CEO v CBO Vebo 'C PD 12 15 12 15 4.5 50-200 0.30-0.36 1.72-2.06 pd TJ- Tstg 0.70-1.2 4.0-6.9 -65 to +200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C 2N4208 2N4209 JAN TX, TXV AVAILABLE CASE 22-03, STYLE 1 TO-18 (TO-206AA) SWITCHING TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) (Iq = 3.