2N4209 - High Speed Switching PNP Silicon Bipolar Transistor

TT Electronics

Datasheet Details

Part number	2N4209
Manufacturer	TT Electronics
File Size	236.03 KB
Description	High Speed Switching PNP Silicon Bipolar Transistor
Datasheet	2N4209 Datasheet

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High Speed Switching PNP Silicon Bipolar Transistor 2N4209 Hermetic TO-18 Metal Package Silicon Planar Epitaxial PNP Transistor High Speed Low Saturation Switching High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector - Base Voltage VCEO Collector - Emitter Voltage VEBO Emitter - Base Voltage IC Continuous Collector Current PD Power Dissipation TA = 25°C Derate Above 25°C Total Power Dissipation TC = 25°C Derate Above 25°C TJ Junction Temperature Range Tstg Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case RθJA Thermal Resistance, Junction To Ambient -15V -15V -4.5V -50mA 360mW 2.05mW/°C 547mW 3.13mW/°C -65 to +200°C -65 to +200°C Max.