Inchange Semiconductor 2N4398
Silicon PNP Power Transistors
DESCRIPTION
¡¤ With TO-3 package ¡¤ Complement to type 2N5301/5302/5303 ¡¤ Low collector saturation voltage ¡¤ Excellent safe operating areaAPPLICATIONS
¡¤ For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base EmitterDESCRIPTION
2N4398 2N4399 2N5745 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=¡æ ) SYMBOL PARAMETER 2N4398 VCBO Collector-base voltage 2N4399 2N5745 2N4398 VCEO Collector-emitter voltage 2N4399 2N5745 VEBO IC IB PD Tj Tstg Emitter-base voltage 2N4398/4399 Collector current 2N5745 Base current Total power dissipation Junction temperature Storage temperature TC=25¡æ -20 -7.5 200 200 -65~200 ¡æ ¡æ A W Open collector Open base CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -30 UNIT Open emitter V V V A THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ¡æ /W Datasheet pdf - Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERIST...