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2N4398 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Key Features

  • . Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min. ) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max. ) @ Ic=-30A, I B=-6A . Low Saturation Voltage: vCE(sat)=-0.75V (Max. ) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max. ) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability: P C=200W (Max. ) . Complementary to 2N5301.

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Datasheet Details

Part number 2N4398
Manufacturer Toshiba
File Size 114.29 KB
Description SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Datasheet download datasheet 2N4398 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON PNP TRIPLE DIFFUSED TYPE 33 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATURES . Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min.) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max.) @ Ic=-30A, I B=-6A . Low Saturation Voltage: vCE(sat)=-0.75V (Max.) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max.) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability: P C=200W (Max.) . Complementary to 2N5301 MAXIMUM RATINGS (Ta=25°C) 1. BASE 2. EMITTER COLLECTOR (CASE) TOSHIBA TO—2 4MA/T0— TC—3, TB— 2-21D1A Weight : 12. 6g CHARACTERISTIC SYMBOL - RATING Collector-Base Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current DC Peak VCBO v CEO(SUS) Vebo ic -40 -40 -5.