• Part: 2N4398
  • Description: SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
  • Manufacturer: Toshiba
  • Size: 114.29 KB
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Datasheet Summary

: SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm Features . Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min.) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max.) @ Ic=-30A, I B=-6A . Low Saturation Voltage: vCE(sat)=-0.75V (Max.) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max.) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability: P C=200W (Max.) . plementary to 2N5301 MAXIMUM RATINGS (Ta=25°C) 1. BASE 2. EMITTER COLLECTOR (CASE) TOSHIBA TO- 2 4MA/T0- TC- 3, TB- 2-21D1A Weight : 12. 6g CHARACTERISTIC SYMBOL - RATING Collector-Base Voltage Collector-Emitter Sustaining...