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2N4399 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Key Features

  • . Specification for hp E and VcE(sat) Up to 30A : hFE=5.0 (Min. ) @ vCE=-4.0V, I C =-30A v CE(sat)="4.0V (Max. ) @ I C=-30A, I B=-6A . Low Saturation Voltage : VCE(sat)=-0.75V (Max. ) @ I C=-10A, Ib=-1.0A VBE(sat)=-1.6V (Max. ) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability : PC=200W (Max. ) . Complementary to 2N5302.

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Datasheet Details

Part number 2N4399
Manufacturer Toshiba
File Size 114.85 KB
Description SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Datasheet download datasheet 2N4399 Datasheet

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Full PDF Text Transcription (Reference)

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SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING.AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATURES . Specification for hp E and VcE(sat) Up to 30A : hFE=5.0 (Min.) @ vCE=-4.0V, I C =-30A v CE(sat)="4.0V (Max.) @ I C=-30A, I B=-6A . Low Saturation Voltage : VCE(sat)=-0.75V (Max.) @ I C=-10A, Ib=-1.0A VBE(sat)=-1.6V (Max.) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability : PC=200W (Max.) .