• Part: 2N4399
  • Description: SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
  • Manufacturer: Toshiba
  • Size: 114.85 KB
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Datasheet Summary

SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING.AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm Features . Specification for hp E and VcE(sat) Up to 30A : hFE=5.0 (Min.) @ vCE=-4.0V, I C =-30A v CE(sat)="4.0V (Max.) @ I C=-30A, I B=-6A . Low Saturation Voltage : VCE(sat)=-0.75V (Max.) @ I C=-10A, Ib=-1.0A VBE(sat)=-1.6V (Max.) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability : PC=200W (Max.) . plementary to 2N5302 MAXIMUM RATINGS (Ta= 25°C) CHARACTERISTIC - - - Collector-Base Voltage 5K Collector-Emitter Sustaining Voltage JK Emitter-Base Voltage - - Collector Current DC Peak 38 Base Current DC Peak Ta=25°C 38...