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2N4399 - PNP Silicon High-Power Transistors

Download the 2N4399 datasheet PDF. This datasheet also covers the 2N4398 variant, as both devices belong to the same pnp silicon high-power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4398-Motorola.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon High-Power Transistors . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage — IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99 IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745 • DC Current Gain Specified — 1.