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TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/433 Devices 2N4399 2N5745 Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC RθJA
2N4399
60 60 5.0 7.5 30
2N5745
80 80
Unit
Vdc Vdc Vdc Adc Adc W W 0 C Unit
0
@ TA =+ 250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range
20 5.0 115 -55 to +200 Max.
3
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 0.875 35
TO-3* (TO-204AA)
C/W
2)
Derate linearly @ 28.57 mW/0C for TA > +250C Derate linearly @ 1.
2N4399 Datasheet
