Datasheet Details
| Part number | 2N4401 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.17 KB |
| Description | NPN Transistor |
| Datasheet | 2N4401-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N4401 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.17 KB |
| Description | NPN Transistor |
| Datasheet | 2N4401-INCHANGE.pdf |
|
|
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·With TO-92 packaging ·Very high DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation 60 V 40 V 6 V 0.6 A 1.2 A 1.5 W Tj Max.Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 83.3 ℃/W 2N4401 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 1mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=150mA ,IB= 15mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=500mA ,IB= 50mA VBE(sat)-1 Base-Emitter Saturation Voltage IC=150mA ,IB= 15mA VBE(sat)-2 Base-Emitter Saturation Voltage IC=500mA ,IB= 50mA ICBO Collector Cutoff Current VCB=60V, IE= 0 IEBO Emitter Cutoff Current VEB= 5V;
IC= 0 hFE-1 DC Current Gain IC= 0.1mA ;
VCE= 1V hFE-2 DC Current Gain IC= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N4401 | NPN switching transistor | NXP |
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2N4401 | NPN General Purpose Amplifier | Fairchild Semiconductor |
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2N4401 | SMALL SIGNAL TRANSISTORS | General Semiconductor |
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2N4401 | NPN Amplifier | Micro Commercial Components |
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