Inchange Semiconductor 2N4902X
Silicon PNP Power Transistors
DESCRIPTION
●Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A●DC Current Gain- : hFE= 20-100 @IC= -1A isc Product Specification 2N4902X
APPLICATIONS
●Designed for general purpose use in power amplifier and switching circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous -1 A PC Collector Power Dissipation@TC=25℃ 87.5 W TJ Junction Temperature Tstg Storage Temperature 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W isc website: 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N4902X ELECTRICA