Datasheet Details
| Part number | 2N4922 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.59 KB |
| Description | NPN Transistor |
| Datasheet | 2N4922-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N4922.
| Part number | 2N4922 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.59 KB |
| Description | NPN Transistor |
| Datasheet | 2N4922-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation ·plement to Type 2N4919 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver circuits, switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 3 A IB Collector Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.16 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N4922 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N4922 | 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS | ON Semiconductor |
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2N4922 | MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS | Motorola |
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2N4922 | (2N4921 - 2N4923) Silicon NPN Power Transistors | SavantIC |
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2N4922G | NPN Transistor | ON Semiconductor |
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