| Part Number | 2N4922 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
ON Semiconductor )
Medium-Power Plastic NPN Silicon Transistors
. . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature:
2N4921 thru.
2N4921 thru 2N4923 *
*ON Semiconductor Preferred Device
* Low Saturation Voltage * * * * * VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation Due to Thermopad Construction * PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 Amp Complement to PNP 2N491. |
2N4922 Datasheet and Specifications PDF
The 2N4922 is a 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS.
| Part Number | 2N4922 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Complement to type 2N4918/4919/4920 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINN. duct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N4921 VCEO(SUS) Collector-emitter sustaining voltage 2N4922 2N4923 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N4921 ICEO . |
| Part Number | 2N4922 Datasheet |
|---|---|
| Description | MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview |
2N4921 thru 2N4923 (SILICON) MJE4921 thruMJE4923
MEDIUM·POWER PLASTIC NPN SILICON TRANSISTORS
· .. designed for driver circuits, switching, and amplifier applications. These high·performance plastic .
* Low Saturation Voltage -VCE(sat)= 0.6 Vdc (Max) @ IC = 1.0 Amp * Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ T C = 250 e * Excellent Safe Operating Area * Gain Specified to Ie = 1.0 Amp * Complement to PNP 2N4918, 2N4919, 2N4920 and MJE4918, MJE4919, MJE4920 * C. |
| Part Number | 2N4922 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation ·Complement to Type 2N4919 ·Minimum Lot-to-. i is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N4922 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 60 V VCE(sat) Collector-Emitte. |