High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -280V(Min)
High Switching Speed
High Current-Gain Bandwidth Product-
: fT= 60MHz(Min)@ IC= -0.1A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high voltage
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isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -280V(Min) ·High Switching Speed ·High Current-Gain Bandwidth Product-
: fT= 60MHz(Min)@ IC= -0.1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-280
V
VCEO
Collector-Emitter Voltage
-280
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.0
A
IB
Base Current-Continuous
-0.
2N5345 Datasheet
