Inchange Semiconductor 2N5665
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.2N5665 Specifications
- Package : TO-66
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 5A
- Collector Base Voltage : 400V
- Collector Emitter Voltage : 300V
- Max Power Dissipation : 2.5W
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | 2N5665 |
|---|---|
| Datasheet | 2N5665 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : VCEO=300V(Min)●Minimum Lot-to-Lot variations for robust device Performance and reliable operation
APPLICATIONS
●Power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 2.5 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N5665 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Collector-Emitter Breakdown Voltage IB=10uA ICBO Collector-Base Cutoff Current VCB= 300V ICEO Collector-Emitter Cutoff Current VCE= 300V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=3A; IB= 0.6A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat)-1 Base-E...