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2N5665 - Silicon NPN Power Transistor

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Part number 2N5665
Manufacturer INCHANGE
File Size 216.98 KB
Description Silicon NPN Power Transistor
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Description

Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 2.5

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