Datasheet Details
| Part number | 2N5665 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.98 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N5665-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N5665 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.98 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N5665-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 2.5 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N5665 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Collector-Emitter Breakdown Voltage IB=10uA ICBO Collector-Base Cutoff Current VCB= 300V ICEO Collector-Emitter Cutoff Current VCE= 300V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=3A;
IB= 0.6A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N5665 | NPN POWER SILICON SWITCHING TRANSISTOR | Microsemi Corporation |
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2N5665 | Bipolar NPN Device | Seme LAB |
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2N5665 | NPN High Voltage Power Silicon Transistor | VPT |
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2N5665 | (2N5664 / 2N5665) Silicon NPN Power Transistors | SavantIC |
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2N5665 | Power Transistor | UNITRODE |
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