2N5665 Datasheet | SavantIC

DESCRIPTION - With TO-66 package - High breakdown voltage APPLICATIONS - High speed switching and linear amplifier - High-voltage operational amplifiers - Switching regulators ,converters - Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5664 2N5665 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER 2N5664 Collector-base voltage 2N5665 2N5664 VCEO VEBO IC IB PT Tj Tstg Collector-emitter voltage 2N5665 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 300 6 5.0 1.0 52.5 200 -65~200 V A A W Open emitter 400 200 V CONDITIONS VALUE 250 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT /W Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5664 IC=10m A ; IB=0 2N5665 IE=10µA ; IC=0 IC=3A; IB=0.3A CONDITIONS SYMBOL 2N5664 2N5665 MIN 200 TYP. UNIT V(BR)CEO V 300 6 V V(BR)EBO Emitter-base breakdown voltage Collector-emitter saturation voltage 2N5664 2N5665 VCEsat-1 0.4 IC=3A; IB=0.6A IC=5A; IB=1A IC=3A; IB=0.3A 1.2 2N5665 IC=3A; IB=0.6A IC=5A; IB=1A VCE=200V;VBE(off)=1.5V 0.2 2N5665 2N5664 VCE=300V;VBE(off)=1.5V VCB=250V; IE=0 1.0 2N5665 2N5664 VCB=400V; IE=0 40 IC=0.5A ; VCE=2V 2N5665 2N5664 25 40 IC=1A ; VCE=5V 2N5665 2N5664 25 15 IC=3A ; VCE=5V 2N5665 10 IC=5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz VCC=30V;IC=1A;IB1=-IB2=30m A 2N5664 5 120 0.25 1.5 VCC=30V;IC=1A;IB1=-IB2=50m A 2N5665 2.0 75 120 1.5 1.0 VCEsat-2 Collector-emitter saturation voltage Base-emitter saturation voltage 2N5664 VBEsat-1 VBEsat-2 Base-emitter saturation voltage...