Datasheet Details
| Part number | 2N5743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.50 KB |
| Description | PNP Transistor |
| Datasheet | 2N5743-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2N5743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.50 KB |
| Description | PNP Transistor |
| Datasheet | 2N5743-INCHANGE.pdf |
|
|
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A PC Collector Power Dissipation@TC=25℃ 25 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 7 ℃/W 2N5743 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A;
IB= -1.0A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -20A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5743 | Bipolar PNP Device | Seme LAB |
 |
2N5743 | (2N5743 / 2N5744) Silicon PNP Power Transistors | SavantIC |
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|---|---|
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