Datasheet Details
| Part number | 2N5744 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.37 KB |
| Description | PNP Transistor |
| Datasheet | 2N5744-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N5744.
| Part number | 2N5744 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.37 KB |
| Description | PNP Transistor |
| Datasheet | 2N5744-INCHANGE.pdf |
|
|
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A PC Collector Power Dissipation@TC=100℃ 25 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 7 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor 2N5744 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A;
IB= -1.0A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -20A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5744 | Bipolar PNP Device | Seme LAB |
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2N5744 | (2N5743 / 2N5744) Silicon PNP Power Transistors | SavantIC |
| Part Number | Description |
|---|---|
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