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2N6078 - NPN Transistor

General Description

Low Collector-Emitter Sustaining Voltage High voltage Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Linear applications Power switching circuits ABSOLU

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Sustaining Voltage ·High voltage ·Low Collector-Emitter Saturation Voltage·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Linear applications ·Power switching circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 275 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current 7 A ICM Collector Current-peak 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 45 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6078 isc website：www.iscsemi.