Seme LAB 2N6078
NPN MULTI - EPITAXIAL POWER TRANSISTOR
MECHANICAL DATA
Dimensions in mm(inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO–66(TO213AA) PIN 1 — Base PIN 2 — Emitter . Case is Collector NPN MULTI - EPITAXIAL POWER TRANSISTORFEATURES
● HIGH VOLTAGE● LOW SATURATION VOLTAGES
● HIGH RELIABILITY
APPLICATIONS
● POWER SWITCHING CIRCUITS● LINEAR
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) VCEX Collector – Emitter Voltage (VEB - 1.5V) VCEO Collector – Emitter Voltage (IB = 0) VCER Collector – Emitter Voltage ( RBE <50Ω) VEBO Emitter – Base Voltage (IC = 0) IC Collector Current ICM Peak Collector Current IB Base Current Ptot Total Power Dissipation at Tcase ≤ 25°C Tstg, Storage T