DC Current Gain-
: hFE = 20-100@ IC= 2.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)
Complement to Type 2N6132
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in power amplifier and switching
Full PDF Text Transcription for 2N6129 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2N6129. For precise diagrams, and layout, please refer to the original PDF.
20-100@ IC= 2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min) ·Complement to Type 2N6132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi
2N6129 Datasheet
