Datasheet Details
| Part number | 2N6132 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.95 KB |
| Description | PNP Transistor |
| Datasheet | 2N6132-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6132.
| Part number | 2N6132 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.95 KB |
| Description | PNP Transistor |
| Datasheet | 2N6132-INCHANGE.pdf |
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·DC Current Gain- : hFE = 20-100@ IC= -2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·Complement to Type 2N6129 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A;
IB= -1.4A VBE(on) Base-Emitter On Voltage IC= -7A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6132 | NPN SILICON TRANSISTOR | Central Semiconductor |
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2N6132 | Silicon PNP Power Transistor | Advanced Semiconductor |
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2N6132 | (2N6132 - 2N6134) Silicon Power Transistor | SavantIC |
| Part Number | Description |
|---|---|
| 2N6130 | NPN Transistor |
| 2N6131 | NPN Transistor |
| 2N6133 | PNP Transistor |
| 2N6134 | PNP Transistor |
| 2N6100 | NPN Transistor |
| 2N6101 | NPN Transistor |
| 2N6102 | NPN Transistor |
| 2N6103 | NPN Transistor |
| 2N6106 | PNP Transistor |
| 2N6107 | PNP Transistor |