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2N6133 - PNP Transistor

General Description

DC Current Gain- : hFE = 20-100@ IC= -2.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) Complement to Type 2N6130 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier an

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Other Datasheets by Inchange Semiconductor

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6133 DESCRIPTION ·DC Current Gain- : hFE = 20-100@ IC= -2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Complement to Type 2N6130 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.