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2N6284 - NPN Transistor

General Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC =10 Adc Collector-Emitter Sustaining Voltage- VCEO(SUS)=100V(Min) Complement to type 2N6287 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC =10 Adc ·Collector-Emitter Sustaining Voltage- VCEO(SUS)=100V(Min) ·Complement to type 2N6287 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial equipment. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current -Continuous 20 A ICP Collector Current-Peak 40 A IB Base Current 0.