Datasheet Summary
isc Silicon NPN Darlingtion Power Transistor
DESCRIPTION
- Built-in Base-Emitter Shunt Resistors
- High DC current gain- hFE = 750 (Min) @ IC =10 Adc
- Collector-Emitter Sustaining Voltage-
VCEO(SUS)=100V(Min)
- plement to type 2N6287
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Intended for general purpose amplifier and low frequency switching applications, such as linear and switching industrial...
